Intersubband transitions in Al0.82In0.18N/GaN single quantum well |
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| Authors: | Wang Yu-Zhou Li Ding Li Lei Liu Ning-Yang Liu Lei Cao Wen-Yu Chen Wei-Hua Hu Xiao-Dong |
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| Affiliation: | State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China;State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China;State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China;State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China;State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China;State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China;State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China;State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China |
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| Abstract: | The influence of the width of a lattice-matched Al0.82In0.18N/GaN single quantum well (SQW) on the absorption coefficients and wavelength of the intersubband transition (ISBT) has been investigated by solving the Schrödinger and Poisson equations self-consistently. The wavelength of 1—2 ISBT increases with L, the thickness of the single quantum well, ranging from 2.88 μm to 3.59 μm. The absorption coefficients of 1—2 ISBT increase with L at first and then decrease with L, with a maximum when L is equal to 2.6 nm. The wavelength of 1—3 ISBT decreases with L at first and then increases with L, with a minimum when L is equal to 4 nm, ranging from approximately 2.03 μm to near 2.11 μm. The absorption coefficients of 1—3 ISBT decrease with L. The results indicate that mid-infrared can be realized by the Al0.82In0.18N/GaN SQW. In addition, the wavelength and absorption coefficients of ISBT can be adjusted by changing the width of the SQW. |
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| Keywords: | Al0.82In0.18N/GaN single quantum well optoelectronic devices mid-infrared intersubband transition |
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