Bipolar resistive switching in Cr-doped TiOx thin films |
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| Authors: | Xing Zhong-Wen |
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| Institution: | National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, China |
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| Abstract: | The electric-pulse-induced resistive switching effect is studied for Ti0.85Cr0.15Ox (TCO) films grown on Ir—Si substrates by pulsed laser deposition. Such a TCO device exhibits bipolar switching behaviour with an electric-pulse-induced resistance ratio as large as about 1000% and threshold voltages smaller than 2 V. The resistive switching characteristics may be understood by resistance changes of a Schottky junction composed of a metal and an n-type semiconductor, and its nonvolatility is attributed to the movement of oxygen vacancies near the interface. |
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| Keywords: | resistive random-access memory (RRAM) electrical-pulse-induced resistive (EPIR) |
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