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The advantage of blue InGaN multiple quantum wells light-emitting diodes with p-AlInN electron blocking layer |
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| Authors: | Lu Tai-Ping Li Shu-Ti Zhang Kang Liu Chao Xiao Guo-Wei Zhou Yu-Gang Zheng Shu-Wen Yin Yi-An Wu Le-Juan Wang Hai-Long Yang Xiao-Dong |
| Affiliation: | Institute of Opto-electronic Materials and Technology, South China Normal University, Guangzhou 510631, China; APT Electronics Ltd, Nansha District, Guangzhou 511458, China |
| Abstract: | InGaN based light-emitting diodes (LEDs) with different electron blocking layers have been numerically investigated using the APSYS simulation software. It is found that the structure with a p-AlInN electron blocking layer showes improved light output power, lower current leakage, and smaller efficiency droop. Based on numerical simulation and analysis, these improvements of the electrical and optical characteristics are mainly attributed to the efficient electron blocking in the InGaN/GaN multiple quantum wells (MQWs). |
| Keywords: | GaN-based light-emitting diodes electron blocking layer AlInN |
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