硼协同掺杂金刚石单晶的高温高压合成

金刚石是一种具有优异性能的极限性超硬多功能材料。人工合成的金刚石可通过掺杂的方式使其具有各种独特的性质。掺硼金刚石兼具p型半导体的导电特性和金刚石自身优良的物理和化学性能,在国防、医疗、勘探、科研等领域具有极高的应用价值。本文基于本课题组高温高压(HPHT)法合成的系列掺硼金刚石以及硼协同掺杂金刚石单晶,进行了硼掺杂金刚石、硼氢协同掺杂金刚石以及硼氮协同掺杂金刚石的合成和性能特征等方面的研究。通过表征合成样品在光学、电学方面的性能,探讨了不同掺杂添加剂对合成金刚石性能的影响,为合成高性能的半导体金刚石提供了思路。

HPHT Synthesis of Boron Co-Doped Single Crystal Diamond

Diamond is a superhard and multi-functional material with excellent properties. Synthetic diamond can own unique properties by doping. Boron-doped diamond has both conductive characteristics of p-type semiconductor and excellent physical and chemical properties. It has wide application value in national defense, medical treatment, exploration, scientific research and other fields. Based on boron-doped diamond and boron co-doped diamond single crystals synthesized by high pressure and high temperature (HPHT) method in our laboratory, the synthesis and properties of boron-doped diamond, boron-hydrogen co-doped diamond and boron-nitrogen co-doped diamond are discussed. The influence of different additives on the synthesis properties of the synthetic diamonds through the optical and electrical characterization are analyzed, which provides some ideas for further synthesizing high-performance semiconductor diamonds.