Synthesis of n-type boron phosphide films and formation of Schottky diode: Al/n-BP/Sb |
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| Authors: | S Dalui |
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| Institution: | Department of Instrumentation Science, USIC Building, Jadavpur University, Calcutta 700032, India |
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| Abstract: | Phosphorous rich BP in thin film form was deposited onto fused silica substrates by co-evaporating boron (99.99%) and phosphorous (99.995%) from a tantalum boat and indirectly heated alumina crucible, respectively. Schottky diode structures for n-type BP (Al/n-BP/Sb) were fabricated out of these films. Corresponding current-voltage and capacitance-voltage characteristics of the Schottky diodes were recorded and analyzed in the light of the existing theories. |
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| Keywords: | Boron phosphide Thin films III-V compounds Schottky diode |
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