Determination of the laterally homogeneous barrier height of thermally annealed and unannealed Au/p-InP/Zn-Au Schottky barrier diodes |
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Authors: | S Asubay A Türüt |
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Institution: | a University of Dicle, Faculty of Science & Art Department of Physics, Diyarbak?r, Turkey b Atatürk University, Faculty of Sciences and Arts, Department of Physics, 25240 Erzurum, Turkey |
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Abstract: | We have identically prepared Au/p-InP Schottky barrier diodes (SBDs). The diodes were annealed up to 400 °C thermally. The barrier height (BH) for the as-deposited Au/p-InP/Zn-Au SBDs from the current-voltage characteristics have varied from 0.58 to 0.72 eV, and ideality factor n from 1.14 to 1.47. The BH for the annealed SBDs from the current-voltage characteristics have varied from 0.76 to 0.82 eV, and ideality factor n from 1.17 to 1.39. As a result of the thermal annealing, it has been seen that the BH values of the annealed SBDs are larger than those of the as-deposited SBDs. We have determined a lateral homogeneous BH value of 0.72 eV for the as-deposited Au/p-InP SBD from the experimental linear relationship between barrier heights and ideality factors, and a value of 0.85 eV for the annealed Au/p-InP SBD. The increase of 0.13 eV in the BH value by means of 400 °C annealing has been ascribed to the formation of the excess charges that electrically actives on the semiconductor surface. |
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Keywords: | 73 30 +y 73 40 Ei 73 40 Ns 73 40 Sx |
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