超高速CMOS/SOI51级环振电路的研制

利用CMOS/SOI工艺在4英寸SIMOX材料上成功制备出沟道长度为1μm、器件性能良好的CMOS/SOI部分耗尽器件和电路,从单管的开关电流比看,电路可以实现较高速度性能的同时又可以有效抑制泄漏电流.所研制的51级CMOS/SOI环振电路表现出优越的高速度性能,5V电源电压下单门延迟时间达到92ps,同时可工作的电源电压范围较宽,说明CMOS/SOI技术在器件尺寸降低后将表现出比体硅更具吸引力的应用前景.

Fabrication of High-speed 51-stage CMOS/SOI Ring Oscillators

CMOS/SOI devices as well as 51-stage ring oscillators with channel design length of 1μm are fabricated using 4 inch SIMOX wafers.SOI MOSFETs show high saturated current while still remain cut-off current very low.Unloaded 51-stage ring oscillators reported here have very good speed performance.Under 5V supply voltage,the delay per stage reaches 92ps.These results are attributed to excellent short-channel characteristics as well as low parasitic performance in CMOS/SOI,which verify that there is significant room for continued performance improvement in scaled CMOS/SOI.