Neutron activation analysis of semiconductor silicon |
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| Authors: | S Niese |
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| Institution: | (1) Zentralinstitut für Kernforschung Rossendorf, Akademie der Wissenschaften der DDR, 8051 Dresden, PF 19, (GDR) |
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| Abstract: | The determination of impurities in semiconductor silicon by nondestructive and destructive NAA is described. To improve the
detection limit, a multiple beta—single gamma detector assembly is used. It is shown that24Na is also produced from silicon by a (n, αp) reaction with reactor neutrons. The cross-section with fission neutrons is 1.8·10−9 barn. |
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