Electronic properties of Hf2X intermetallic compounds (X = Al, Si, Ni, Ga and Ge)期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

Electronic properties of Hf2X intermetallic compounds (X = Al, Si, Ni, Ga and Ge)

Authors:	I. Yaar I. Halevy S. Kahane A. Beck Z. Berant

Affiliation:	1. Beant College of Engineering & Technology, Gurdaspur, India 2. Department of Nuclear Physics, Research School of Physical Sciences and Engineering, Australian National University, Canberra, Australia 3. Department of Physics, Faculty of Science, Australian National University, Canberra, Australia 4. Department of Electronic Materials Engineering, RSPhysSE, Australian National University, Canberra, Australia

Abstract:	Using ¹⁰⁰Pd/¹⁰⁰Rh probes, perturbed angular correlation measurements were performed to study Pd-related defects in Si as a function of dopant concentration and dopant type. Pd-vacancy and Pd-B complexes were identified by their characteristic electric field gradients in highly doped n- and p-type Si, respectively. Both pairs exhibited a T^3/2 temperature dependence of their electric field gradients.

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