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具有超晶格缓冲层的量子阱激光器的研制
引用本文:张福厚,宋珂,邢建平,郝修田,曾一平.具有超晶格缓冲层的量子阱激光器的研制[J].中国激光,1997,24(2):97-99.
作者姓名:张福厚  宋珂  邢建平  郝修田  曾一平
作者单位:山东工业大学电子工程系微电子技术教研室,中国科学院半导体研究所
摘    要:在衬底表面制作超晶格缓冲层可以有效地掩埋体材料的缺陷,使阈值电流大幅度降低,光功率成倍增长。所研制出的量子阱激光器室温脉冲平均线性光功率大于20mW(未镀反射膜),波长为778nm,最低阈值电流为30mA,阈值电流密度为400~600A/cm2,谱线宽度为5nm。

关 键 词:超晶格,量子阱,半导体激光器
收稿时间:1996/4/22

Investigation of Quantum Well Lasers which Have Superlattice Buffer Layers
Zhang Fuhou,Song Ke,Xing Jianping,Hao Xiutian.Investigation of Quantum Well Lasers which Have Superlattice Buffer Layers[J].Chinese Journal of Lasers,1997,24(2):97-99.
Authors:Zhang Fuhou  Song Ke  Xing Jianping  Hao Xiutian
Abstract:To bury the substrate defects effectivel, the superlattice buffer layers are fabricated on the surface of the substrate, and a good interface can be gotten. It decreases the threshold current and increases the output power greatly. The quantum well lasers that we fabricated can be operated at room temperature, the wavelength is 778nm and the lowest threshold current at room temperature (CW) is 30 mA, the threshold current density is about 400~600 A/cm 2, the linear output power with uncoated facets is greater than 20 mW, and the width of the spectral line is 5 nm.
Keywords:superlattice  quantum well  semiconductor lasers
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