| pMOS金属栅极材料的研究进展 |
| |
| 引用本文： | 杨智超, 黄安平, 肖志松. pMOS金属栅极材料的研究进展[J]. 物理, 2010, 39(02): 113-122. |
| |
| 作者姓名： | 杨智超 黄安平 肖志松 |
| |
| 作者单位： | 1.北京航空航天大学物理系 北京 100191 |
| |
| 摘 要： | 随着金属氧化物半导体场效应管（metal-oxide-semiconductor field-effect transistors,MOSFETs）等比缩小迈向45nm技术节点，金属栅极已应用于新型MOSFET器件，改善了与高k栅介质的兼容性，并消除了传统多晶硅栅极的栅耗尽及硼穿透等效应.文章综述了pMOS器件金属栅极材料的发展历程、面临的主要问题以及未来的研究趋势等.
|
| 关 键 词： | pMOS 金属栅极 高k栅介质 功函数 界面偶极子 |
Progress in the development of pMOS metal gate electrode materials |
| |
| Progress in the development of pMOS metal gate electrode materials[J]. PHYSICS, 2010, 39(02): 113-122. |
| |
| Affiliation: | 1.北京航空航天大学物理系 北京 100191 |
| |
| Abstract: | As the scaling of metal-oxide-semiconductor field-effect transistors (MOSFETs) continues towards the 45nm technology node, metal gate electrodes have been used in novel MOSFET devices, improving compatibility with high-k dielectrics and eliminating the effects of gate depletion and boron penetration. This paper reviews recent progress, issues that need to be solved, and future trends in the development of pMOS metal gate electrode materials. |
| |
| Keywords: | pMOS metal gate electrode high k gate dielectric work function interfacial dipole |
|
| 点击此处可从《物理》浏览原始摘要信息 |
|
点击此处可从《物理》下载全文 |
