| 光导开关研究进展及其在脉冲功率技术中的应用 |
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| 引用本文： | 袁建强, 谢卫平, 周良骥, 等. 光导开关研究进展及其在脉冲功率技术中的应用[J]. 强激光与粒子束, 2008, 20(01). |
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| 作者姓名： | 袁建强 谢卫平 周良骥 陈林 王新新 |
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| 作者单位： | 1.清华大学 电机系, 北京 1 00084;;;2.中国工程物理研究院 流体物理研究所, 四川 绵阳 621 900 |
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| 摘 要： | 概述了GaAs光导开关的发展历史，通过对GaAs和SiC进行比较指出，SiC由于禁带宽度大、击穿场强高、电子饱和漂移速度大、热导率高等优势被认为是更好的光导开关材料。比较了本征光电导和非本征光电导的不同之处，报道了利用本征光电导和非本征光电导的SiC光导开关的最新进展。介绍了光导开关在超宽带源和紧凑型脉冲功率系统中的应用，提出了SiC光导开关进一步发展的关键技术并进行了展望。
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| 关 键 词： | 光导开关 砷化镓 碳化硅 脉冲功率 超宽带源 紧凑型脉冲功率系统 |
Developments and applications of photoconductive semiconductor switches in pulsed power technology |
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| yuan jian-qiang, xie wei-ping, zhou liang-ji, et al. Developments and applications of photoconductive semiconductor switches in pulsed power technology[J]. High Power Laser and Particle Beams, 2008, 20. |
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| Authors: | yuan jian-qiang xie wei-ping zhou liang-ji chen lin wang xin-xin |
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| Affiliation: | 1. Department of Electrical Engineering,Tsinghua University,Beijing 100084,China;;;2. Institute of Fluid Physics,CAEP,P.O.Box 919-108,Mianyang 621900,China |
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| Abstract: | Photoconductive semiconductor switches (PCSS) have been used in pulsed power technology due to their advantages over conventional switches, such as fast rise time, negligible time jitter, and optical electrical isolation. History and developments of GaAs PCSS are summarized. SiC with wide band gap, high breakdown field, high saturation electron drift velocity and high thermal conductivity is considered as a promising semiconductor for PCSS. Status and latest progress of SiC PCSS employing intrinsic and extrinsic photoconductivity are reported. Applications of PCSS in ultra-wide band and compact pulsed power system are briefly introduced. The critical technological problems to be investigated in future are presented. |
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| Keywords: | photoconductive semiconductor switch gaas sic pulsed power ultra-wide band (uwb) compact pulsed power system |
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