离子束辅助工艺中APS源偏转电压对HfO2薄膜性能的影响

基于Leybold APS1104镀膜系统，采用离子束辅助反应沉积技术，以金属Hf粒为初始镀膜材料，APS源偏转电压为50~140 V范围内,在［100］单晶硅片和紫外石英（JGS1）基板上制备了HfO2单层膜。分别利用Lambda 900分光光度计、X射线光电子能谱仪、X射线衍射仪以及原子力显微镜对HfO2薄膜的光谱性能、表面及纵向化学成分、晶相结构以及表面粗糙度进行了分析。结果表明：当APS源偏转电压在120~140 V及50~90 V两个范围内变化时，HfO2薄膜的紫外短波光学损耗随着偏转电压的降低而减小，而为110~90 V时紫外短波光学损耗对偏转电压的变化不敏感；偏转电压在50~140 V的范围内时，制备的HfO2薄膜表面及纵向化学成分无明显变化；当偏转电压为100 V时，HfO2薄膜晶粒尺寸及表面粗糙度分别达到最大值26.2 nm及5.79 nm，其后，随着偏转电压的降低，二者均逐渐减小。

Influence of bias voltage of APS ion source on performance of hafnium films deposited with ion-assisted technology

With ion beam assisted reactive deposition, hafnia films were prepared at different bias voltages of the APS ion source in the range from 50 V to 140 V on silicon disks and ultraviolet quartz glasses (JGS1) in the Leybold APS 1 104 coating system, where metallic hafnium was used as the starting material. The Lambda 900 spectrophotometer was employed to measure the transmittance spectra of the deposited films. The composition and microstructure were measured with XPS and XRD measurements. AFM was used to characterize the surface morphology and roughness. It is shown that the short ultraviolet optical loss will decrease with the reduction of the bias voltage of the APS ion source when it changes between the two ranges of 140~120 V and 90~ 50 V, but it is not sensitive to the bias voltage in