Muonium in ultra-pure and Si-doped germanium |
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| Authors: | K. -P. Döring K. -P. Arnold M. Gladisch N. Haas E. E. Haller D. Herlach W. Jacobs M. Krause M. Krauth H. Orth A. Seeger |
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| Affiliation: | (1) Institut für Theoretische und Angewandte Physik, Universität Stuttgart, Germany;(2) Institut für Physik, Max-Planck-Institut für Metallforschung, Postfach 800665, D-7000 Stuttgart 80, Germany;(3) Physikalisches Institut, Universität Heidelberg, D-6900 Heidelberg, Germany;(4) Department of Materials Science and Lawrence Berkeley Laboratory, University of California, 94720 Berkeley, California, USA |
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| Abstract: | The influence of the isoelectronic impurity silicon ([Si]=1012–1018 cm–3) on the spin precession signals of positive muons in ultra-pure germanium crystals is investigated between 5 and 340 K in transverse magnetic fields of 0.5 to 27.5 mT. Normal ( isotropic ) muonium atoms Mu are formed in all samples with about the same probability ( 0.7). Down to quite low temperatures (20 K) Mu is found to diffuse very rapidly through the Ge matrix and to become ionized by interaction with the Si atoms. Another ionization process, presumably due to the screening of the + by the increasing number of free charge carriers, sets in at about 180 K. |
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