| 金属有机化合物气相外延生长GaN薄膜的电子微结构研究 |
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| 引用本文： | 程立森,张泽,杨志坚,童玉珍,张国义.金属有机化合物气相外延生长GaN薄膜的电子微结构研究[J].物理,2000,29(1):19-22. |
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| 作者姓名： | 程立森 张泽 杨志坚 童玉珍 张国义 |
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| 作者单位： | 1. 中国科学院物理研究所,中国科学院凝聚态物理中心,北京电镜室,北京,100080
2. 北京大学物理系,介观物理实验室,北京,100871 |
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| 摘 要： | 研究了金属有机化合物气相外延(MOVPE)方法在(0001)氧化铝基底上生长的GaN薄膜的微结构，目的在于解释GaN缓冲层在二步法生长过程中的作用及其对外延层晶体质量的影响.在缓冲层中观察到了高密度的结构缺陷，并发现了两种晶体结构(立方和六角)的GaN.进而对两种结构GaN的成因进行讨论，并对缓冲层和外延层中结构缺陷的关系进行了研究.
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| 关 键 词： | GaN 金属有机化合物气相外延(MOVPE)，微结构 |
| 修稿时间： | 1999-03-25 |
TEM STUDY OF GaN FILM MICROSTRUCTURES GROWN BY MOVPE |
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| CHENG Li-Sen,ZHANG Ze,YANG Zhi-Jian,TONG Yu-Zhen,ZHANG Guo-Yi.TEM STUDY OF GaN FILM MICROSTRUCTURES GROWN BY MOVPE[J].Physics,2000,29(1):19-22. |
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| Authors: | CHENG Li-Sen ZHANG Ze YANG Zhi-Jian TONG Yu-Zhen ZHANG Guo-Yi |
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| Abstract: | Microstructures of GaN films grown by MOVPE on (0001) sapphire substrates were studied. High density defects were observed, and two phases of GaN identified in the GaN buffer layer. The reasons for the formation of the respective phases were investigated and the relationship between the microstructures of the GaN buffer layer and epitaxial layer was also studied. |
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| Keywords: | GaN MOVPE microstructure |
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