前端接触势垒高度对非晶硅和微晶硅异质结太阳电池的影响

运用AMPS-1D（Analysis of Microelectronic and Photonic Structures） 程序系统分析了前端接触（铟锡氧化物）的势垒分别对非晶硅和微晶硅太阳电池性能的影响，比较了两种影响的差异并分析了具体原因. 研究表明：与微晶硅相比，非晶硅受铟锡氧化物功函数Φ_ITO的影响更加显著. 随着Φ_ITO的增加非晶硅的各项物理性能（如太阳电池效率、填充因子等）得到明显改善，而微晶硅的各项参数虽然也随Φ_ITO增加而改变，但更容易趋于饱和. 模拟结果显示，在实际的太阳电池装备过程中可根据前端电极的性能来选择合适的p型硅材料.关键词：铟锡氧化物非晶硅微晶硅计算机模拟

Influence of barrier height of the front contact on the amorphous silicon and microcrystalline silicon heterojunction solar cells

Indium tin oxide （ITO） compound is widely used as the front contact of silicon solar cells. Its work function Φ_ITO is one of the most important factors related to the performance of solar cells. In this paper, we use the AMPS-1D （Analysis of Microelectronic and Photonic Structures） program developed by Pennsylvania State University to analyze the dependence of physical parameters of solar cells on the Φ_ITO. Our results show that Φ_ITO has greater effect on amorphous silicon solar cells than on the microcrystalline ones. Physical performance of amorphous silicon （the efficiency, filling factor etc.） improves with increasing Φ_ITO, which is more obvious than that for microcrystalline silicon. These results provide a useful guide in selecting appropriate p-type silicon materials based on the performance of front contacts.