Atmospheric Pressure Plasma Discharge for Polysiloxane Thin Films Deposition and Comparison with Low Pressure Process |
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Authors: | Riccardo?A?Siliprandi Stefano?Zanini Elisa?Grimoldi Francesco?S?Fumagalli Email author" target="_blank">Ruggero?BarniEmail author Claudia?Riccardi |
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Institution: | 1.Dipartimento di Fisica G. Occhialini,Università degli Studi di Milano-Bicocca,Milan,Italy |
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Abstract: | An atmospheric pressure dielectric barrier plasma discharge has been used to study a thin film deposition process. The DBD
device is enclosed in a vacuum chamber and one of the electrodes is a rotating cylinder. Thus, this device is able to simulate
continuous processing in arbitrary deposition condition of pressure and atmosphere composition. A deposition process of thin
organosilicon films has been studied reproducing a nitrogen atmosphere with small admixtures of hexamethyldisiloxane (HMDSO)
vapours. The plasma discharge has been characterized with optical emission spectroscopy and voltage-current measurements.
Thin films chemical composition and morphology have been characterized with FTIR spectroscopy, atomic force microscopy (AFM)
and contact angle measurements. A strong dependency of deposit character from the HMDSO concentration has been found and then
compared with the same dependency of a typical low pressure plasma enhanced chemical vapour deposition process. |
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