Structural evolution of SiNx films deposited by ECR and its light emission |
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| Authors: | Y Xin ZX Huang Y Shi L Pu R Zhang YD Zheng |
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| Institution: | aDepartment of Physics and Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing University, Nanjing 21093, P.R. China;bKey Laboratory of Thin Films and Department of Physics, Suzhou University, Suzhou 215006, P.R. China |
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| Abstract: | Structural and optical properties of a-SiNx films deposited by electron cyclotron resonance chemical vapor deposition (ECRCVD) have been investigated. The Fourier transform infrared (FTIR) spectroscopy shows the structural evolution of the SiNx films, which are defined as Si-rich SiNx and N-rich SiNx films, also confirmed by Raman spectroscopy. The origin of the light emission for SiNx films may be attributed to two mechanisms, i.e., quantum confinement effect (QCE) and transition of defect energy levels. The correlation between light emission and structures of SiNx films is discussed. |
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| Keywords: | ECRCVD SiNx FTIR Light emission |
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