Pulsed laser deposition of chromium-doped zinc selenide thin films for mid-infrared applications |
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Authors: | JE Williams RP Camata VV Fedorov SB Mirov |
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Institution: | (1) Department of Physics, University of Alabama at Birmingham, Birmingham, AL 35294, USA |
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Abstract: | We have grown Cr doped ZnSe thin films by pulsed laser deposition on GaAs, sapphire and Si substrates through KrF excimer
laser ablation of hot-pressed targets containing appropriate stoichiometric mixtures of Zn, Se, and Cr species and hot-pressed
ceramic targets made of ZnSe and CrSe powders in vacuum and in an He background environment (10-4 Torr). Deposited films were analyzed using X-ray diffraction to determine crystallinity and energy dispersive X-ray fluorescence
to confirm Cr incorporation into the films. Photoluminescence measurements on the films show intracenter Cr2+ emission in the technologically important 2–2.6 μm spectral range.
PACS 78.66.hf; 78.66.-w; 78.55.-m; 78.66.Bz; 78.20.-e |
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Keywords: | |
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