Growth Mechanism of Vertically Aligned Ag(TCNQ) Nanowires |
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引用本文: | 叶春暖,曹冠英,莫晓亮,方方,邢晓艳,陈国荣,孙大林.Growth Mechanism of Vertically Aligned Ag(TCNQ) Nanowires[J].中国物理快报,2004,21(9):1787-1790. |
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作者姓名: | 叶春暖 曹冠英 莫晓亮 方方 邢晓艳 陈国荣 孙大林 |
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作者单位: | DepartmentofMaterialsScience,FhdanUniversity,Shanghai200433 |
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摘 要: | Highly oriented Ag(TCNQ) nanowires have been prepared on Si(111) wafer at 1O0℃ by the vapour-transport reaction between silver and TCNQ without any other catalyst. X-ray diffraction analysis shows that the composition and crystal structure of the obtained nanostructure were Ag(TCNQ) crystalline. Most Ag(TCNQ) nanowires were grown uniformly and vertically on the substrate with diameters ranging from 50 to 30Onto and the lengths measuring from 2 to 50μm by scanning electron microscopy. Ag particles were observed on the substrate from pure thin Ag film heated under the same conditions as used in synthesizing the nanowires. Nucleation and short Ag(TCNQ) nanowires were prepared by controlling the reaction time, providing direct evidence of the growth mechanism in a nanometre scale. The growth process was explained according to the vapour-liquid-solid model. The gradient of temperature and the densely distributed Ag particles may contribute to the vertically aligned growth. These results will be helpful for the controllable synthesis of Ag(TCNQ) nanowires.
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关 键 词: | 银纳米导线 X射线衍射分析 纳米结构 垂直排列 扫描电子显微镜分析 |
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