Synthesis and optical characterization of c-axis oriented GaN thin films on amorphous quartz glass via sol–gel process |
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Authors: | Godhuli Sinha Kalyan Adhikary Subhadra Chaudhuri |
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Institution: | aDepartment of Materials Science, Indian Association for the Cultivation of Science, Kolkata 700032, India |
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Abstract: | c-Axis oriented GaN nanocrystalline thin films were fabricated by nitridation of three different thin films of -GaO(OH), -Ga2O3 or β-Ga2O3 obtained by sol–gel technique on amorphous quartz glass substrates. All these GaN thin films showed near band edge emission at 390 nm and yellow luminescence at 570 nm. The crystalline nature and c-axis orientation as well as luminescence properties of the GaN thin films increased by several times by using a buffer layer of GaN on the substrate. |
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Keywords: | GaN Gallium oxide Nanocrystals Thin films c-Axis orientation Photoluminescence |
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