| 功率VDMOSFET与IGBT的最新结构与性能特点 |
| |
| 引用本文： | 金千男,杜国同.功率VDMOSFET与IGBT的最新结构与性能特点[J].吉林大学学报(信息科学版),2004,22(6):549-552. |
| |
| 作者姓名： | 金千男 杜国同 |
| |
| 作者单位： | 吉林大学,电子科学与工程学院,吉林,长春,130012;吉林大学,电子科学与工程学院,吉林,长春,130012 |
| |
| 摘 要： | 综合评述了VDMOSFET(Vertical Double Diffused MOSFET)与IGBT(Insulated Gate Bipolar Transistor)的一般器件结构,分析比较了采用垂直沟槽栅极(Trench gate)新结构的功率VDMOSFET与IGBT的结构与性能特点.新结构的VDMOSFET与IGBT能有效地减少原胞尺寸和增加沟道密度,具有大电流,高电压,开关频率高,高可靠性,低损耗的特点.在性能上明显优于目前广泛使用的VDMOSFET和IGBT结构.
|
| 关 键 词： | 功率器件 功率MOSFET 绝缘栅双极晶体管 |
| 文章编号： | 1671-5896(2004)06-0549-04 |
| 修稿时间： | 2003年12月4日 |
Structural and performance features of power VDMOSFET and IGBT with new structures |
| |
| JIN Qian-nan,DU Guo-tong.Structural and performance features of power VDMOSFET and IGBT with new structures[J].Journal of Jilin University:Information Sci Ed,2004,22(6):549-552. |
| |
| Authors: | JIN Qian-nan DU Guo-tong |
| |
| Abstract: | The VDMOSFET(Vertical Double Diffused MOSFET) and IGBT(Insulated Gate Bipolar Transistor) with conventional structure were reviewed.On the basis of the structure, the structural and performance features of power VDMOSFET and IGBT with new structure(trench gate) were analyzed and compared. This trench gate structure has small cell size and large channel density, it has characteristics of large current, high power, high voltage, high switch frequency, proven reliability, low losses and so on. The power VDMOSFET and IGBT with trench gate structure is obviously beyond prevalent power device-VDMOSFET, IGBT. |
| |
| Keywords: | power device power MOSFET IGBT |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
|
