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The influence of hydrogen on the atomic distribution function and electrical resistance of amorphous chromium films
Authors:B I Belevtsev  W Buckel  J Hasse
Institution:(1) Physikalisches Institut der Universität Karlsruhe (TH), Postfach 69 80, D-7500 Karlsruhe, Federal Republic of Germany;(2) Present address: Institute for Low Temperature Physics and Engineering, UkrSSR Academy of Sciences, 47, Lenin Avenue, 310164 Kharkov, USSR
Abstract:Electrical resistivity of amorphous chromium films (20–37 nm thick) deposited in a hydrogen atmosphere (P H 2=8·10–6–2·10–4 hPa) onto a substrate cooled by liquid helium down to ap 2 K is measured, and electron-diffraction studies have been performed immediately after the quench condensation and after annealing to different temperatures up to 300 K. The preparation method employed permits a considerable hydrogen enrichment of the films to be reached. The maximum hydrogen concentration corresponds approximately to a stoichiometric composition of CrH. It is found that as the maximum concentration is approached the atomic distribution functionG(r) changes remarkably. The interatomic distances increase considerably (by 10%) and the atomic densities decrease. It is quite possible that amorphous chromium hydride is a final state with the maximum hydrogen concentration. For films with intermediate concentration,G(r) is found to vary substantially under annealing up to ap90 K. The electron-diffraction and electronmicroscopic data, as well as the variations in resistivity due to annealing, suggest that with annealing up to sim90 K, a hydrogen redistribution occurs in the amorphous films, initially homogenous in concentration. We observe also distinct indications of separation into phases with increased and reduced hydrogen contents.
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