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Reversible Silylene Insertion Reactions into Si−H and P−H σ‐Bonds at Room Temperature
Authors:Dr. Ricardo Rodriguez  Dr. Yohan Contie  Raphael Nougué  Dr. Antoine Baceiredo  Dr. Nathalie Saffon‐Merceron  Dr. Jean‐Marc Sotiropoulos  Dr. Tsuyoshi Kato
Affiliation:1. http://hfa.ups‐tlse.fr;2. Université de Toulouse, UPS, and CNRS, LHFA UMR 5069, Toulouse, France;3. CSIC-Universidad de Zaragoza, Departamento de Qu?mica Inorgánica, Instituto de Síntesis Química y Catálisis Homogénea (ISQCH), Zaragoza, Spain;4. Université de Toulouse, UPS, and CNRS, ICT FR2599, Toulouse, France;5. UNIV PAU & PAYS ADOUR, Institut des Sciences Analytiques et de Physico-Chimie pour l'Environnement et les Matériaux, IPREM, ECP, UMR 5254, Pau, France
Abstract:Phosphine‐stabilized silylenes react with silanes and a phosphine by silylene insertion into E?H σ‐bonds (E=Si,P) at room temperature to give the corresponding silanes. Of special interest, the process occurs reversibly at room temperature. These results demonstrate that both the oxidative addition (typical reaction for transient silylenes) and the reductive elimination processes can proceed at the silicon center under mild reaction conditions. DFT calculations provide insight into the importance of the coordination of the silicon center to achieve the reductive elimination step.
Keywords:density functional calculations  reactive intermediates  silylenes  structure elucidation  X-ray crystallography
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