Compensation Effect for Grain Boundary Diffusion in a Bicrystalline Experiment

The paper is devoted to the problem of the compensation effect for grain boundary (GB) diffusion, i.e. the linear dependence of the pre-exponential factor of the GB diffusion coefficient on the activation energy. Specific features of GB diffusion as a thermally activated process namely, the influence of segregation factor, K, and variation of the GB width, d, on the diffusion rate are discussed. A special diffusion experiment was designed to estimate the contribution of the separate component parts of the triple product, KdD_GB (D_GB is the GB diffusion coefficient). The experiment was performed with Al bicrystals. The variation of the GB width d, and a value of the segregation factor K, due to GB structure change are estimated. It is concluded that D_GB is the main GB structure-sensitive parameter in the triple product. This circumstance allows us to consider the GBs in Al bicrystals as a series of uniform objects and to describe the kinetics of GB diffusion in terms of the compensation temperature T_c and a “barrier” phase. The value of T_c for GB diffusion of Zn and Ge in Al bicrystals is practically the same and equals 709 and 706 K, respectively. The character of the “barrier” phase is discussed.