Dielectric properties of triglycine sulfate crystals with defects at low and infralow frequencies |
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Authors: | A V Shil’nikov V A Fedorikhin B A Strukov N V Ratina |
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Institution: | (1) Volgograd State Architectural and Civil Engineering Academy, Akademicheskaya ul. 1, Volgograd, 400074, Russia;(2) Faculty of Physics, Moscow State University, Vorob’evy gory, Moscow, 119992, Russia |
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Abstract: | Dielectric responses of several crystals in ultraweak measuring fields at low and infralow frequencies are compared, namely, of nominally pure, Cr-and Lα-alanine-doped triglycine sulfate (TGS) crystals and TGS + Cr3+ crystals irradiated with X-rays. It is shown that dopant-induced bias fields give rise to crystal unipolarity, suppress the domain contribution to their dielectric response, and diffuse the phase transition. It is established that X-ray irradiation of the crystals results in “radiation annealing” of TGS + Cr3+ crystals, which increases their permittivity and diminishes diffusion of the phase transition. |
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