Shallow acceptor population and free hole concentration in Si: In and Si:Ga with IR-photoexcitation |
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Authors: | K Geim G Pensl M Schulz |
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Institution: | (1) Institut für Angewandte Physik, Universität, Glückstrasse 9, D-8520 Erlangen, Fed. Rep. Germany;(2) Present address: Components Group, c/o Research Laboratories, Siemens AG, Otto-Hahn-Ring 6, D-8000 München 83, Fed. Rep. Germany |
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Abstract: | Hall measurements at low temperaturesT<50 K have been performed on Si:In (N
In1017 cm–3) and Si:Ga (N
Ga1018 cm–3) with infrared photoexcitation of holes into the valence band. It is shown in quantitative agreement with a theoretical model that the population of shallow acceptors, e.g. B and Al, which are present as impurities in concentrations ofN
B,Al1012-1014 cm–3 strongly affects the photoexcited hole concentration. Photo-Hall measurements can, therefore, serve as a tool for the determination of low impurity acceptor concentrations in the case of high In- or Ga-doping. Hole capture coefficientsB
In=6×10–4 (T/K)–1,8 cm3 s–1 andB
Ga=2×10–4 (T/K)–1 cm3 s–1 have been determined. |
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Keywords: | 72 20 Jv 71 55-i |
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