| ZnCdSe/ZnSe多量子阱的生长和激子光学性质的研究 |
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| 引用本文： | 张希清,梅增霞,段宁,Tang Z K. ZnCdSe/ZnSe多量子阱的生长和激子光学性质的研究[J]. 光子学报, 2001, 30(2): 152-156 |
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| 作者姓名： | 张希清 梅增霞 段宁 Tang Z K |
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| 作者单位： | 1. 北方交通大学光电子技术研究所，北京 100044
2. Department of Physics,The Hong Kong University of Science and Technology |
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| 基金项目： | 国家自然科学基金! (批准号 6960 60 0 1 )，中科院激发态物理开放实验室基金，高等学校骨干教师资助计划项目 |
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| 摘 要： | 用分子束外延在GaAs衬底上生长了ZnCdSe/ZnSe多量子阱结构.利用X射线衍射(XRD)、变温度PL光谱和ps发光衰减等研究了ZnCdSe/ZnSe多量子阱结构和激子复合特性.由变温PL光谱讨论了随温度升高辐射线宽展宽和辐射复合效率降低的机理.
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| 关 键 词： | 激子 量子阱 |
| 收稿时间： | 2000-05-16 |
| 修稿时间： | 2000-05-16 |
EPITAXIAL GROWTH AND EXCITON OPTICAL PROPERTIES OF ZnCdSe/ZnSe QUANTUM WELLS |
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| Tang Z K. EPITAXIAL GROWTH AND EXCITON OPTICAL PROPERTIES OF ZnCdSe/ZnSe QUANTUM WELLS[J]. Acta Photonica Sinica, 2001, 30(2): 152-156 |
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| Authors: | Tang Z K |
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| Affiliation: | 1. Institute of Optoelectronics Technology, Northern Jiaotong University, Beijing 100044;2. Department of Physics, The Hong Kong University of Science and Technology |
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| Abstract: | Zn 0.7 Cd 0.3 Se/ZnSe quantum wells were grown by molecular beam epitaxy on substrate GaAs.The structure and exciton optical properties in high quality ZnCdSe/ZnSe MQWs are investigated by means of XRD spectra,the temperature dependence of the PL spectra and time resolved photoluminescence spectrum at 77K.The highest order of satellite peak of the sample is 5 from XRD spectrum.Excitonic luminescence decay time is 79.1ps.The linewidth of the exciton emission becomes broader with increasing temperature.The linewidth at low temperature is due to the alloy composition and well thickness fluctuations,and the broadening linewidth at high temperature is contributed by the interactions among the exciton and LO phonons and ionized donor impurities.The PL intensities are reduced with increasing temperature,which is mainly due to the thermal dissociation of excitons,i.e.,the electrons or holes jump into the barriers from the wells by thermal excitations. |
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| Keywords: | Exciton Quantum well |
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