Problems of homogeneous irradiation of Si ingots more than 200 mm in diameter under neutron doping |
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| Authors: | N A Antropov E Yu Boyarko E K Gorbunov K V Grigorjev Yu Yu Kryuchkov O G Chernikov and I P Chernov |
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| Institution: | 1.OOO NeitroTom,Tomsk,Russia;2.Branch of FGUP Rosenergoatom Concern,Leningrad Nuclear Station,St. Petersburg,Russia |
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| Abstract: | The problem of homogeneous irradiation of Si ingots of large diameter (i.e., comparable with the thermal neutron diffusion
length in silicon—20 cm) by thermal neutrons is considered. The effect of neutron absorption on the irradiation homogeneity
is discussed. It is established for some usual cases of neutron doping that the neutron distribution in the irradiation zone
affects the irradiation homogeneity. The results obtained can be useful for choosing and designing the irradiation zone for
neutron doping of silicon. |
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