| 布里奇曼法生长碲镉汞晶体的缺陷及其展望 |
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| 引用本文： | 王跃.布里奇曼法生长碲镉汞晶体的缺陷及其展望[J].红外技术,1998,20(1):1-4,8. |
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| 作者姓名： | 王跃 |
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| 作者单位： | 昆明物理研究所，西北工业大学凝固技术国家重点实验室 |
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| 摘 要： | 简单介绍了布里奇曼法生长碲镉汞晶体的主要缺陷以及缺陷的控制原理，回顾了国内进行磅镉汞晶体生长的布里奇曼法及加速坩埚旋转技术的布里奇曼法（ＡＣＲＴ－Ｂ）研究的情况，并提出了进一步研究的问题。
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| 关 键 词： | 碲镉汞 布里奇曼法 晶体缺陷 红外光学材料 |
Prospect of Hg 1-x Cd xTe Crystal Bridgman Growth Methd and Its Defect Control |
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| Wang Yue.Prospect of Hg 1-x Cd xTe Crystal Bridgman Growth Methd and Its Defect Control[J].Infrared Technology,1998,20(1):1-4,8. |
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| Authors: | Wang Yue |
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| Abstract: | The defects in MCT crystals grown by Bridgman method and defect control principle were discussed. Current state of MCT Bridgman and ACRT B growth in P.R. China was reviewed. Problems need to study in the furture during Bridgman growth were proposed. |
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| Keywords: | MCT Bridgman method Crystal growth Construction perfection |
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