Injection electroluminescence from quantum-size InGaAs/GaAs structures with metal/semiconductor and metal-oxide-semiconductor junctions

Electroluminescence from forward-biased diode structures with Au(Ni)/GaAs and Au(Ni)/tunneling-thin oxide/GaAs junctions has been studied. The possibility of luminescence amplification from the Schottky diodes by introducing a tunneling-thin anode-oxide or heavily doped p ⁺-GaAs layer between the metal and semiconductor have been demonstrated. The studies of the temperature dependence of electroluminescence and the I-W curves indicate that the amplification of the electroluminescence intensity from the above structures may be associated with lowering the potential barrier for the minority carriers under the forward bias of the Schottky barrier.