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Dimer elongation on the monohydride-covered Ge/Si(100) surface
Authors:A A Bailes III  M A Boshart  L E Seiberling
Institution:

a Department of Physics, University of Florida, PO Box 118440, Gainesville, FL 32611-8440, USA

b 376 Hermitage Avenue, Cookeville, TN 38501, USA

Abstract:Using transmission ion channeling, we have made the first measurement of the Ge dimer geometry for the monohydride-covered Ge/Si(100)-2×1 surface. Comparison of calculated angular scans with experimental angular scans near the left angle bracket100right-pointing angle bracket and left angle bracket110right-pointing angle bracket directions has resulted in a measured Ge dimer bond length of 2.8 Å, which is 8% longer than the corresponding dimer bond length reported for Ge on Si(100) in the absence of H. This elongation is similar to that reported for Si dimers on the Si(100) surface. Also, relative to the (100) surface plane, the dimers change from tilted without H to untilted with H.
Keywords:Adatoms  Epitaxy  High-energy ion scattering (HEIS)  Ion–solid interactions  scattering  channeling  Semiconducting surfaces  Single crystal epitaxy  Surface structure
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