|
|||||
|
|
| 镶嵌在SiO2薄膜中InAs纳米颗粒的Raman散射 | |
| 引用本文： | 朱开贵,石建中,邵庆益. 镶嵌在SiO2薄膜中InAs纳米颗粒的Raman散射[J]. 物理学报, 2000, 49(11) |
| 作者姓名： | 朱开贵 石建中 邵庆益 |
| 作者单位： | 1. 中国科学技术大学结构分析开放研究实验室,合肥,230026 2. Data Storage Institute,National University of Singapore,Singapore 119260 3. 北京大学电子学系,北京,100871 |
| 摘 要： | 对镶嵌在SiO2 薄膜中纳米InAs颗粒的Raman散射谱进行了研究 .与大块InAs晶体相比 ,InAs纳米颗粒的Raman散射谱具有相似的特征 ,即由纵光学声子模和横光学声子模组成 ,但是散射峰宽化并红移 .用声子限域效应解释了散射峰的红移现象 ,并结合InAs纳米颗粒的应力效应解释了红移量与理论值的差异 . |
| 关 键 词： | SiO_2薄膜 InAs量子点 Raman散射 |
RAMAN SCATTERING FROM InAs NANOCRYSTALS EMBEDDED IN SiO2 THIN FILMS |
|
| ZHU KAI-GUI,SHI JIAN-ZHONG,SHAO QING-YI. RAMAN SCATTERING FROM InAs NANOCRYSTALS EMBEDDED IN SiO2 THIN FILMS[J]. Acta Physica Sinica, 2000, 49(11) | |
| Authors: | ZHU KAI-GUI SHI JIAN-ZHONG SHAO QING-YI |
| Abstract: | Raman scattering from InAs nanocrystals embedded in SiO 2 thin films has been measured and studied. Raman spectra of InAs nanocrystals have a similar feature with that of bulk InAs crystal. Broadened and red|shifted Raman scattering peaks were observed from the nanocrystals; this has been attributed to the phonon confinement effect. A compressive stress in the interface between InAs nanocrystals and the SiO 2 matrix was also taken into account to interpret the red shift. |
| Keywords: | SiO 2 thin films InAs quantum dots Raman scattering |
| 本文献已被 CNKI 万方数据 等数据库收录！ | |