| GaAs(001)衬底上分子束外延生长立方和六方GaN薄膜 |
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| 引用本文： | 刘洪飞,陈弘,李志强.GaAs(001)衬底上分子束外延生长立方和六方GaN薄膜[J].物理学报,2000,49(6):1132-1135. |
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| 作者姓名： | 刘洪飞 陈弘 李志强 |
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| 作者单位： | (1)清华大学电子工程系，北京 100084; (2)中国科学院物理研究所，北京 100080 |
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| 摘 要： | 采用分子束外延方法在GaAs(001)衬底上生长出了03微米厚的GaN薄膜，X射线双晶衍射和室温光荧光测试结果表明，采用GaAs氮化表面作为成核层可获得高纯度立方GaN薄膜而采用AlAs氮化表面作为成核层可获得高纯度六方GaN薄膜.这一研究结果表明在GaAs衬底上生长GaN薄膜的相结构可以通过选择不同的成核层来控制.
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| 关 键 词： | 砷化镓 分子束外延生长 氮化镓薄膜 |
| 收稿时间： | 1999-12-14 |
EPITAXIALL GROWTH OF CUBIC AND HEXAGONAL GaN FILMS ON GaAs(001) SUBSTRATES BY MBE |
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| LIU HONG-FEI,CHEN HONG,LI ZHI-QIANG,WAN LI,HUANG QI,ZHOU JUN-MING,LUO YI and HAN YING-JUN.EPITAXIALL GROWTH OF CUBIC AND HEXAGONAL GaN FILMS ON GaAs(001) SUBSTRATES BY MBE[J].Acta Physica Sinica,2000,49(6):1132-1135. |
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| Authors: | LIU HONG-FEI CHEN HONG LI ZHI-QIANG WAN LI HUANG QI ZHOU JUN-MING LUO YI and HAN YING-JUN |
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| Abstract: | GaN films of about 300nm were grown on GaAs(001) substrates by molecular beam epitaxy (MBE).X-ray double-crystal diffraction and room-temperature photoluminescence measurements show that the films grown on nitridized GaAs nucleation layer are pure cubic GaN while the films grown on nitridized AlAs nucleation layer are pure hexagonal GaN.The present study shows that the phase of GaN samples grown on GaAs substrates can be controlled using different nucleation layers |
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