硅基MEMS加工技术及其标准工艺研究

本文论述了硅基MEMS标准工艺,其中包括三套体硅标准工艺和一套表面牺牲层标准工艺.深入地研究了体硅工艺和表面牺牲层工艺中的关键技术.体硅工艺主要进行了以下研究:硅/硅键合、硅/镍/硅键合、硅/玻璃键合工艺及其优化;研究了高深宽比刻蚀工艺、优化了工艺条件;解决了高深宽比刻蚀中的Lag效应;开发了复合掩膜高深宽比多层硅台阶刻蚀和单一材料掩膜高深宽比多层硅台阶刻蚀工艺研究.表面牺牲层工艺主要进行了下列研究:多晶硅薄膜应力控制工艺;防粘附技术的研究与开发.

Study of Silicon-Based MEMS Technology and Its Standard Process

In this paper the four sets of standard processes developed by Institute of microelectronics of Peking University are presented.In these four sets of standard process,three of them are bulk micromachining processes and one is surface sacrificial process.The key technologies used in these processes were studied systematically.Research work included:systematically study how to control the stress of polysilicon film;developed two anti stiction technologies;research of Si/Si bonding,Si/Ni/Si bonding and Si/Glass bonding;study and optimization of high aspect ratio silicon etching;successfully reducing RIE Lag from 23% to 5%;exploiting two kinds of multi step silicon etching technologies.