Antiphase dynamics of a multimode quantum well semiconductor laser

A novel multilongitudinal mode model of a semiconductor laser is presented. The model takes into account four-wave mixing of the longitudinal modes and is based on the correct procedure of simultaneous expansion of the population inversion in time and space series. It is shown that the model has antiphase regimes similar to those observed in experiment. Such behavior exists in a narrow range of the carrier diffusion coefficient, which allows us to estimate the value of this parameter.