| BF+2注入多晶硅栅F迁移特性的分析与模拟 |
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| 引用本文： | 张廷庆,李建军,刘家璐,赵元富. BF+2注入多晶硅栅F迁移特性的分析与模拟[J]. 物理学报, 1998, 47(4): 645-651 |
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| 作者姓名： | 张廷庆 李建军 刘家璐 赵元富 |
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| 作者单位： | (1)骊山微电子学研究所，临潼 710600; (2)西安电子科技大学微电子学研究所，西安 710071 |
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| 基金项目： | 国家自然科学基金资助的课题. |
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| 摘 要： | 在深入分析BF+2注入多晶硅栅F在多晶硅栅中迁移特性的基础上，建立了F在多晶硅栅中的迁移方程.采用有限差分法，模拟了BF+2注入多晶硅栅F在多晶硅栅中的分布.模拟结果与二次离子质谱(SIMS)分析结果相符.给出了80keV，2×1015cm-2 BF+2注入多晶硅栅900℃，30min退火条件下F在多晶硅中的发射系数e=6×10关键词：
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| 关 键 词： | 二氟化硼 氟离子注入 迁移特性 多晶硅栅 |
| 收稿时间： | 1997-08-06 |
ANALYSIS AND SIMULATION OF FLUORINE MIGRATION CHARACTERISTICS OF BF+2-IMPLANTED INTO POLYCRYSTALLINE SILICON GATE |
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| ZHANG TING-QING,LI JIAN-JUN,LIU JIA-LU and ZHAO YUAN-FU. ANALYSIS AND SIMULATION OF FLUORINE MIGRATION CHARACTERISTICS OF BF+2-IMPLANTED INTO POLYCRYSTALLINE SILICON GATE[J]. Acta Physica Sinica, 1998, 47(4): 645-651 |
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| Authors: | ZHANG TING-QING LI JIAN-JUN LIU JIA-LU ZHAO YUAN-FU |
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| Abstract: | The migration equation of fluorine in polycrystalline silicon gate is presented on the basis of analysis for the migration characteristics of fluorine in polycrystalline silicon gate after BF+2 is implanted into polycrystalline silicon gate.The distribution of fluorine in polycrystalline silicon gate is simulated by the finite difference methods.The simulation results are in good agreement with the experiments.Under the condition of 80keV,2×1015cm-2BF+2 implanted into polycrystalline Si gate and then annealed at 900℃ for 30s,some important coefficients are given as follows: emisson coefficient of fluorine in polycrystalline silicon e=6×10-2s-1,diffusion coefficient of fluorine in grain boundary Db=7.64×10-12cm/s,absorption coefficient of fluorine in polycrystalline Si/SiO2 interface S1=1.74×10-3s-1 and damage absorption coefficient of fluorine in polycrystalline silicon S1=7.32×10-4s-1. |
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