立方氮化硼薄膜的生长特性与粘附性研究

用X射线衍射技术、红外吸收光谱、扫描电子显微镜、X射线光电子能谱对热丝辅助射频等离子体化学汽相沉积法制备的立方氮化硼(c-BN)薄膜的生长特性和粘附性进行了研究.改变生长条件，在Si、不锈钢和Ni衬底上沉积c-BN薄膜，进而研究了c-BN薄膜的质量和生长条件与衬底之间的关系.实验发现，Ni衬底上生长的薄膜c-BN含量较高，且粘附性好.当Si衬底上溅射一层Ni过渡层，再生长c-BN薄膜，薄膜中c-BN含量提高，与Si衬底的粘附性也显著增强. 关键词：

THE GROWTH CHARACTER AND ADHESION OF CUBIC BORON NITRIDE THIN FILMS

Cubic boron nitride (c-BN) thin films were deposited on silicon,nickel,stainless steel and Ni-coated silicon substrates by hot filament enhanced plasma chemical vapor deposition (CVD).The films were characterized by infrared spectroscopy(IR), X-ray diffraction, scanning electron microscopy(SEM),and X-ray photoelectron spectra(XPS).It was found that the quality of c-BN thin films varied with deposition conditions and substrates.Under optimum conditions,thin films with high percentage of c-BN and good adhesion were deposited on Ni substrate.When sputtering a Ni interlayer on Si substrate prior to the growth,the c-BN content of the films increased and an excellent adhesion was obtained.