| 赝配GaAs/In0.2Ga0.8As量子阱导带不连续量的C-V和电容瞬态测量 |
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| 引用本文： | 卢励吾,张砚华,杨国文,王占国,J.WANG,Y.WANG,WEIKUN GE.赝配GaAs/In0.2Ga0.8As量子阱导带不连续量的C-V和电容瞬态测量[J].物理学报,1998,47(8):1339-1345. |
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| 作者姓名： | 卢励吾 张砚华 杨国文 王占国 J.WANG Y.WANG WEIKUN GE |
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| 作者单位： | (1)国家光电子工程中心，中国科学院半导体研究所，北京 100083; (2)香港科技大学物理系，香港九龙; (3)中国科学院半导体研究所半导体材料科学开放研究实验室，北京 100083 |
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| 基金项目： | 国家自然科学基金(批准号：69776014)、香港科技大学和中国科学院半导体研究所半导体材料科学开放研究实验室资助的课题. |
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| 摘 要： | 分别采用二种不同方法测量分子束外延(MBE)生长GaAs/In0.2Ga0.8As单量子阱结构的导带不连续量ΔEc:1) 考虑样品界面电荷修正的电容-电压(C-V)分布；2) 量子阱载流子热发射产生的电容瞬态(DLTS).C-V测得的ΔEc=0.227eV,大约相当于89% ΔEg.DLTS测得的ΔEc=0.229eV,大约相当于89.9% ΔEg.结果
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| 关 键 词： | 砷化镓 铟镓砷 量子阱 导带 C－V 电容 |
| 收稿时间： | 1997-08-20 |
| 修稿时间： | 3/6/1998 12:00:00 AM |
CONDUCTION-BAND OFFSET IN PSEUDOMORPHIC GaAs/In0.2Ga0.8As QUANTUM WELL DETERMINED BY C-V PROFILING AND DLTS TECHNIQUES |
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| LU LI-WU,ZHANG YAN-HUA,YANG GUO-WEN,WANG ZHAN-GUO,J.WANG,Y.WANG and WEIKUN GE.CONDUCTION-BAND OFFSET IN PSEUDOMORPHIC GaAs/In0.2Ga0.8As QUANTUM WELL DETERMINED BY C-V PROFILING AND DLTS TECHNIQUES[J].Acta Physica Sinica,1998,47(8):1339-1345. |
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| Authors: | LU LI-WU ZHANG YAN-HUA YANG GUO-WEN WANG ZHAN-GUO JWANG YWANG and WEIKUN GE |
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| Abstract: | The conduction-band offset ΔEc has been determined for molecular beam epitaxy (MBE) grown GaAs/In0.2Ga0.8As single quantum well structure,by measuring the capacitance-voltage profiling, while taking into account a correction for the interface charge density, and the capacitance transient resulting from thermal emission of carrier from the quantum well, respectively.We found that ΔEc=0.227eV,corresponding to about 89% ΔEg,from the C-V profiling; and ΔEc=0.229eV, corresponding to about 89.9% ΔEg, from the deep level transient spectroscopy (DLTS) technique. The results suggest that the conduction-band discontinuity ΔEc obtained from the C-V profiling is in good agreement with that obtained from the DLTS technique. |
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