Effect of the Arsenic Concentration on the Characteristics of the Growth Step Echelon in GaAs Epitaxy |
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| Authors: | Ivonin I V Lavrent'eva L G Aleksandrova G A Devyat'yarova L L |
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| Institution: | (1) V. D. Kuznetsov Siberian Physical-Technical Institute at Tomsk State University, Russia |
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| Abstract: | The effect of the arsenic concentration in the vapor phase on the growth step distribution over the surface of GaAs epitaxial layers grown in a chlorine-hydride vapor-transport system on substrates with 4° (111)A and (113)A orientations is studied. It is demonstrated that the average distance between steps in the echelon depends on the arsenic concentration and increases with it up to a certain constant value. It is assumed that this is connected with the change in the kink density at the steps. |
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