Laser Annealing of Thin-Film Ferroelectric Heterostructures |
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| Authors: | K. A. Vorotilov V. D. Zvorykin I. G. Lebo A. S. Sigov |
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| Affiliation: | (1) Moscow State Institute of Radioengineering, Electronics, and Automation (Technical University), Pr. Vernadskogo 78, Moscow, 117454, Russia;(2) P. N. Lebedev Physical Institute, Russian Academy of Sciences, Leninskii Pr. 53, Moscow, 119991, Russia |
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| Abstract: | Preliminary experiments on laser annealing of ferroelectric samples by ultraviolet radiation of a KrF laser are carried out. In principle, laser annealing allows one to reduce appreciably the duration of thermal action, minimize the size of the samples treated, and control the crystallization processes in the samples. A special focussing system was employed to provide homogeneous irradiation of the spot with dimensions of ~1×1 cm2 within a broad energy range from 0.1 to 10~J per pulse. The range of energy densities leading to phase transitions in thin films is determined. |
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| Keywords: | laser annealing heterostructure ferroelectric thin film phase transition |
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