| 1.3μm低阈值InGaAsP/InP应变补偿MQW激光器的LP-MOCVD生长 |
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| 引用本文： | 陈博,王圩,汪孝杰,张静媛,周帆,马朝华.1.3μm低阈值InGaAsP/InP应变补偿MQW激光器的LP-MOCVD生长[J].中国激光,1998,25(9):785-788. |
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| 作者姓名： | 陈博 王圩 汪孝杰 张静媛 周帆 马朝华 |
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| 作者单位： | 中国科学院半导体研究所国家光电子工艺中心 |
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| 摘 要： | 报道了用低压金属有机物化学气相淀积（ＬＰ－ＭＯＣＶＤ）方法外延生长ＩｎＧａＡｓＰ／ＩｎＰ应变补偿多量子阱结构。用此材料制备的掩埋异质结（ＢＨ）条形结构多量子阱激光器具有极低阈值电流４～６ｍＡ。２０～４０℃时特征温度Ｔ０高达６７Ｋ，室温下外量子效率为０．３ｍＷ／ｍＡ。
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| 关 键 词： | 应变补偿，InGaAsP，激光器，LP－MOCVD |
| 收稿时间： | 1997/5/12 |
Low Threshold 1.3 μm InGaAsP/InP Strained Compensated Multi quantum Well Lasers Grown by LP MOCVD |
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| Chen Bo,Wang Wei,Wang Xiaojie,Zhang Jingyuan,Zhou Fan,Ma Chaohua.Low Threshold 1.3 μm InGaAsP/InP Strained Compensated Multi quantum Well Lasers Grown by LP MOCVD[J].Chinese Journal of Lasers,1998,25(9):785-788. |
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| Authors: | Chen Bo Wang Wei Wang Xiaojie Zhang Jingyuan Zhou Fan Ma Chaohua |
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| Abstract: | A 1.3 μm InGaAsP/InP strained compensated multi quantum wells structure grown by low pressure metalorganic chemical vapor deposition (LP MOCVD) was proposed. The threshold currents of buried heterostructure (BH) MQW lasers with this strained layers structure were 4~6 mA mostly. The characteristic temperatures up to 67K were observed for the devices under a temperature between 20~40℃, the single facet slope efficiency is 0.3 mW/mA at room temperature. |
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| Keywords: | strained compensated InGaAsP laser LP MOCVD |
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