Structural lattice defects in silicon observed at111in by perturbed angular correlation |
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| Authors: | M Deicher G Grübel E Recknagel H Skudlik Th Wichert |
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| Institution: | 1. Fakult?t für Physik, Universit?t Konstanz, D-7750, Konstanz, W.-Germany
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| Abstract: | Probing of structural defects in silicon by the perturbed γγ angular correlation (PAC) technique is demonstrated between 77
K and 1300 K. The behaviour of radioactive111 In probe atoms implanted at 295 K, is monitored during isochronal annealing in n-type, p-type and intrinsic Si. Trapping
of defects, produced by the111In implantation itself or by postirradiation is studied in P-doped crystals (1016/cm3-1017/cm3). |
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