| 退火参数对铁电TiN/HfxZr1-xO2/TiN薄膜器件的电学性能影响 |
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| 引用本文： | 朱曦,马海力,高天,冯洁,吕杭炳.退火参数对铁电TiN/HfxZr1-xO2/TiN薄膜器件的电学性能影响[J].微电子学,2020,50(2):257-261. |
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| 作者姓名： | 朱曦 马海力 高天 冯洁 吕杭炳 |
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| 作者单位： | 上海交通大学 微纳电子学系 薄膜与微细技术教育部重点实验室, 上海 200240 ;中国科学院微电子所 微电子器件与集成技术重点实验室, 北京 100029 |
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| 基金项目： | 国家自然科学基金资助项目(61774012,61574010,61901010);北京市自然科学基金资助项目(4142007,4143059,4192014,4204092);北京市未来芯片技术高精尖创新中心科研基金资助项目(KYJJ2016008);中国博士后科学基金资助项目(2019M650404);朝阳区博士后科研经费资助项目(2019ZZ-9)。 |
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| 摘 要： | 采用磁控溅射法制备了Zr含量占比为0.134和0.156的TiN/HfxZr1-xO2/TiN结构的薄膜器件。对该器件进行了不同条件下的退火实验。研究了HfxZr1-xO2器件的电流、极化和循环特性,以及特性随退火温度和退火时间改变的变化规律,并结合微观结构表征手段,对器件特性随退火条件变化的规律做出了解释。在此基础上,总结出溅射法制备氧化铪锆薄膜的适用退火条件。实验结果表明,当退火温度低于氧化铪的居里温度时,退火后的器件仍表现出顺电性而不具有铁电性。Zr含量为0.156的HfxZr1-xO2器件在氧气中快速退火的最佳退火条件为:温度600℃、退火时间50 s。适当延长退火时间可以提高器件性能。
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| 关 键 词： | HfxZr1-xO2 磁控溅射 退火 MIM结构 |
| 收稿时间： | 2019/4/29 0:00:00 |
Effects of Annealing Parameters on Electrical Properties of Ferroelectric TiN/HfxZr1-xO2/TiN Thin Film Devices |
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| Institution: | (Key Lab.for Thin Film and Micro Fabrication of the Ministry of Education,Department of Micro/Nano Elec.,Shanghai Jiao Tong University,Shanghai 200240 P.R.China;Key Lab.of Microelec.Dev.and Integr,Technol.,Institute of Microelec.,The Chinese Academy of Sciences,Beijing 100029,P.R.China) |
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| Abstract: | TiN/HfxZr1-xO2/TiN devices with Zr contents of 0.134 and 0.156 were prepared by magnetron sputtering and annealed under different conditions. The effects of annealing temperature and time on the current, polarization, and cyclic properties of the devices were investigated. The changes of the device characteristics with annealing conditions were explained by means of microstructure characterization. On this basis, the suitable annealing conditions for the preparation of HfxZr1-xO2 films by sputtering were obtained. According to the experiment results, ferroelectricity of TiN/HfxZr1-xO2/TiN devices were not achieved by annealing below the Curie temperature of hafnium oxide. The TiN/HfxZr1-xO2/TiN device with 15.6% zirconium atom ratio annealed at 600 ℃ for 50 s revealed excellent properties in leakage current and polarization. Proper prolongation of annealing time would improve the device performance. |
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| Keywords: | HfxZr1-xO2 magnetron sputtering annealing MIM structure |
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