Evaporation and ripple formation during pulsed laser irradiation of GaAs |
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| Authors: | D.O. Boerma H. Hasper K.G. Prasad |
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| Affiliation: | LAN, University of Groningen, Westersingel 34, 9718 CM Groningen, The Netherlands |
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| Abstract: | The evaporation of As and Ga during pulsed laser irradiation of GaAs single crystals was measured under vacuum. The data were reproduced in a thermal-model calculation. The laser power density useful for annealing was found to be limited both by excessive evaporation and surface ripple formation. |
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