Study of defect annealing by supercurrent proton beam irradiation and of radiation defect profiles in GaAs by the positron annihilation method

The annealing of radiation defects in GaAs by a supercurrent proton beam with currents up to 200 A cm^?2 and 4.8 MeV energy was studied. The positron annihilation method (measurement of angular distribution of annihilation photons) has been used to study the depth profiles of radiation defects in solids. Profiles of vacancy-type defects in GaAs irradiated by a supercurrent proton beam have been measured.