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LaB6场发射阴极阵列的制备工艺研究
引用本文:王本莲,林祖伦,王小菊,曹伟.LaB6场发射阴极阵列的制备工艺研究[J].电子器件,2009,32(2).
作者姓名:王本莲  林祖伦  王小菊  曹伟
作者单位:电子科技大学光电信息学院.成都,610054
摘    要:利用微细加工技术在单晶LaB;材料上制备出了场发射二极管阴极阵列.具体工作是结合半导体工艺,采用薄膜沉积、涂胶、曝光、显影、刻蚀以及电化学腐蚀等一系列工序制备出了性能良好的尖锥阵列.工作的重点是覆有掩膜层单晶LaB6材料的电化学腐蚀.通过大量实验摸索出了最佳的工艺参数(包括电解液类型及浓度、电解电流、电解时间等),得到了具有一定表面形貌及阵列高度且底面平整度良好的场发射阴极阵列.

关 键 词:场发射阴极阵列  半导体工艺  电化学腐蚀

Research on Fabrication of LaB6 Field Emitter Arrays
WANG Ben-lian,LIN Zu-lun,WANG Xiao-ju,CAO-Wei.Research on Fabrication of LaB6 Field Emitter Arrays[J].Journal of Electron Devices,2009,32(2).
Authors:WANG Ben-lian  LIN Zu-lun  WANG Xiao-ju  CAO-Wei
Institution:School of Opto-Electronic Information;University of Electronic Science and Technology of China;Chengdu 610054;China
Abstract:Field emission diode arrays on the single crystal LaB6 materials were fabricated by micromachining technologies.A series of processes of semiconductor technologies including deposition,coating,exposure,development,etching and electrochemical corrosion were introduced to fabricate field emitter arrays with good performances.The key point was the electrochemical corrosion of single crystal LaB6 materials coated with mask layers.A large number of experiments were made to find out the optimal technology paramet...
Keywords:LaB6
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