霍耳效应实验中的对称性破缺研究

迄今为止,半导体材料的导电类型及很多参数的获得,仍需利用霍尔效应实验.然而,在霍尔效应发生的同时,有很多副效应发生,这使得霍尔效应电压的测量值总与其真实值偏离,导致所测量的各种参数也存在一定的偏差.为了消除副效应的影响,常常采用对称测量法,但对称测量法所测量的数据列仍然存在着对称性破缺.该文从载流子运动状态入手,逐步深入分析得出,对称性破缺产生的根源是电场和磁场的共同作用,并发现磁场对于材料对称性的破坏作用大于电场.该文对于半导体材料性能的深入研究,以及其各种功能的开发利用,具有一定的启发作用.

Research on symmetry breakage in Hall effect experiment

So far, it has been still necessary for obtaining the types of electrical conductivity in semiconductor materials and many parameters obtained to use Hall effect experiment. So, Hall effect experiment is a very important classical experiment. However, at the same time as Hall effect happens, there are a lot of side effects. The measured value of Hall effect voltage always deviates from its real value. It results in a certain deviation of measured parameters. In practice, the symmetrical measurement is often used to eliminate the influence of side effects. However, there is symmetry breaking in the data columns which are measured by the symmetric measurement. Considered the carrier’s motion, the origin of symmetry breaking is gradually analyzed which is the joint action of an electric field and a magnetic field. And magnetic field is stronger than electric field in symmetry breaking. So that semiconductor material properties is studied.