1200 V碳化硅功率MOSFET低温特性的实验表征及分析

碳化硅功率MOSFET是宽禁带功率半导体器件的典型代表,具有优异的电气性能。基于低温环境下的应用需求,研究了1200 V碳化硅功率MOSFET在77.7 K至300 K温区的静/动态特性,定性分析了温度对碳化硅功率MOSFET性能的影响。实验结果显示,温度从300 K降低至77.7 K时,阈值电压上升177.24%,漏-源极击穿电压降低32.99%,栅极泄漏电流降低82.51%,导通电阻升高1142.28%,零栅压漏电流降低89.84%(300 K至125 K)。双脉冲测试显示,开通时间增大8.59%,关断时间降低16.86%,开关损耗增加48%。分析发现,碳化硅功率MOSFET较高的界面态密度和较差的沟道迁移率,是导致其在低温下性能劣化的主要原因。

Experimental characterization and analysis of 1200 V SiC power MOSFET at cryogenic temperatures

SiC power MOSFETs are typical representatives of wide-band gap(WBG)power semiconductor devices with excellent electrical performance.Based on the application requirements of cryogenic temperatures,this paper focused on the static/dynamic characterization of 1200 V SiC power MOSFETs in the temperature range of 77.7 K to 300 K,and the experimental results at cryogenic temperatures were illustrated and analyzed.When the temperature decreased from 300 K to 77.7 K,a 177.244% increase in threshold voltage,a 32.99% reduction in breakdown voltage between gate and source,an 82.51% reduction in gate leakage current,an 1142.28% increase in on-state resistance,and an 89.84% reduction in zero-gate voltage drain current(300 K to 125 K)were experimentally measured.Moreover,using a double-pulse test,an 8.59% increase in turn-on time,a 16.86% reduction in turn-off time,and a 48% increase in switching loss was observed.Analysis revealed the high interface state density and poor channel mobility of SiC power MOSFETs were the main reasons for its performance degradation at cryogenic temperatures.