Dynamical conductivity of type-I semiconductor superlattices |
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| Affiliation: | 1. Department of Mechanical Engineering, Qom University of Technology, 37195, Qom, Iran;2. Department of Mechanical Engineering, Isfahan University of Technology, 84156, Isfahan, Iran;1. State Key Laboratory of Geohazard Prevention and Geoenvironment Protection (Chengdu University of Technology), Chengdu University of Technology, College of Materials, Chemistry & Chemical Engineering, 1#, Dongsanlu, Erxianqiao, Chengdu 610059, Sichuan, PR China;2. Chengdu University of Technology, College of Environment and Ecology, 1#, Dongsanlu, Erxianqiao, Chengdu 610059, Sichuan, PR China;1. School of Mechanical Engineering, KIIT University, Odisha, India;2. Indian Institute of Technology Bhubaneswar, Jatni, Khurdha, India |
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| Abstract: | We calculated longitudinal and transverse macroscopic as well as microscopic dynamical conductivity for a modulation-doped type-I superlattice. Our computed long wavelength macroscopic conductivity significantly differs from Drude conductivity in the low-frequency regime (microwave and infrared radiations). Macroscopic conductivity shows oscillatory behaviour along the direction of growth of the superlattice. Propagation of transverse electromagnetic waves in a superlattice has been studied for all possible values of frequency and wavevector. It is found that microscopic transverse conductivity exhibits poles along both real and imaginary axes of frequency. Depending on the values of wavevector components, along and perpendicular to the direction of the superlattice, both poles can lie on real or imaginary axes of frequency. We also find that there can be more than one penetration depth for a superlattice and one of them decreases with frequency for frequencies below the microwave regime. |
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